Scientists Unlock Hafnia's Potential for Next-Generation Computer Memory
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Scientists advance use of hafnium oxide (hafnia) for next-gen non-volatile computing memory, offering significant advantages.
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Hafnia exhibits ferroelectric properties that can be leveraged for fast, energy-efficient, robust data storage.
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Achieved metastable ferroelectric state in bulk hafnia using high pressure and less yttrium alloying.
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Improves purity and properties compared to previous thin film or high yttrium alloy methods.
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Significant progress toward utilizing hafnia's intriguing ferroelectricity for practical applications like computing.