Researchers Set New Records for Narrow Linewidth 193nm Laser, Enabling Advances in Lithography and Manufacturing
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Researchers achieved 60mW, 193nm laser with 640MHz linewidth using two-stage sum frequency generation in LBO crystals, setting new power and efficiency records.
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Narrow linewidth 193nm laser can improve lithography resolution and speed in semiconductor manufacturing.
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Versatility of high coherence 193nm laser benefits lithography, laser machining, and material processing applications.
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27% conversion efficiency from 221nm to 193nm and 3% from 258nm to 193nm set new benchmarks in efficiency.
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Demonstrates potential of LBO crystals for reliable, high-power deep UV lasers up to the Watt-level.