Posted 2/27/2024, 11:42:01 AM
Samsung Unveils New HBM3E Memory to Boost AI Performance
- Samsung announced new HBM3E 12H DRAM memory with advanced TC NCF technology for faster AI training and inference
- 12H refers to 12 stacked memory chips vertically, allowing for 36GB capacity per module, 50% higher than 8H
- TC NCF is the thermal/conductive film between stacked chips, now thinner to enable 12H stacks
- Improves yields, thermal properties, and allows higher memory capacities for AI accelerators
- Samsung estimates 34% faster AI training and 11.5x more inference users with higher capacity HBM3E memory